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HANBit
SRAM MODULE 2Mbyte (512K x 32-Bit), 72PIN SIMM, 5V Part No.
HMS51232M4G
HMS51232M4G
GENERAL DESCRIPTION
The HMS51232M4GG is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-printed circuit board. PD0 to PD3 identify the module's density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
w Access times : 10, 12, 15, 17 and 20 w High-density 2Mbyte design w High-reliability, high-speed design w Single + 5V 0.5V power supply w Easy memory expansion /CE and /OE functions w All inputs and outputs are TTL-compatible w Industry-standard pinout w FR4-PCB design w Part Identification - HMS51232M4G : SIMM design
PIN
1 2 3 4 5 6 7 8 9 10 11 12 13 14
PIN ASSIGNMENT
SYMBOL
NC NC PD2 PD3 Vss PD0 PD1 DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Vcc A0 A7 A1 A8 A2 A9 DQ12 DQ4
PIN
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
SYMBOL
DQ13 DQ5 DQ14 DQ6 DQ15 DQ7 Vss /WE A15 A14 /CE2 /CE1 /CE4 /CE3 A17 A16 /OE Vss DQ24 DQ16 DQ25 DQ17 DQ26 DQ18
PIN
49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72
SYMBOL
DQ27 DQ19 A3 A10 A4 A11 A5 A12 Vcc A13 A6 DQ20 DQ28 DQ21 DQ29 DQ22 DQ30 DQ23 DQ31 Vss A18 NC NC NC
OPTIONS
w Timing 10ns access 12ns access 15ns access 17ns access 20ns access w Packages 72-pin SIMM
MARKING
-10 -12 -15 -17 -20 M
15 16 17 18 19 20 21 22 23 24
PD0 = Open PD1 = Open PD2 = Vss PD3 = Open
72-Pin SIMM TOP VIEW
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HANBit FUNCTIONAL BLOCK DIAGRAM
32 19
HMS51232M4G
DQ0 - DQ31 A0 - A18
A0-18 /WE /OE /CE DQ 0-7
U1
/CE1 A0-18 /WE /OE /CE /CE2 A0-18 /WE /OE /CE /CE3 A0-18 /WE /OE /WE /OE /CE /CE4 PD0 = Open PD1 = Open PD2 = Vss PD3 = Open /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Dout Din POWER STANDBY ACTIVE ACTIVE ACTIVE DQ24-31 DQ16-23 DQ 8-15
U2
U3
U4
TRUTH TABLE
MODE STANDBY NOT SELECTED READ WRITE
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HANBit ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature SYMBOL VIN,OUT VCC PD TSTG
HMS51232M4G
RATING -0.5V to +7.0V -0.5V to +7.0V 4W -65oC to +150oC
Operating Temperature TA 0oC to +70oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage * VIL(Min.) = -2.0V (Pulse Width 10ns) for I 20 mA ** VIH(Max.) = Vcc+2.0V (Pulse Width 10ns) for I 20 mA SYMBOL VCC VSS VIH VIL
( TA=0 to 70 o C ) MIN 4.5V 0 2.2 -0.5* TYP. 5.0V 0 MAX 5.5V 0 Vcc+0.5V** 0.8V
DC AND OPERATING CHARACTERISTICS (1)(0oC TA 70 oC ; Vcc = 5V 0.5V )
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage * Vcc=5.0V, Temp=25 oC TEST CONDITIONS VIN = Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC VOH = -4.0mA VOL = 8.0mA SYMBOL ILI IL0 VOH VOL MIN -2 -2 2.4 MAX 2 2 0.4 UNITS mA mA V V
DC AND OPERATING CHARACTERISTICS (2)
DESCRIPTION Power Supply Current: Operating Power Supply Current: Standby TEST CONDITIONS Min. Cycle, 100% Duty /CE=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, /CE=VIH f=0MHZ, /CEVCC-0.2V, VIN VCC-0.2V or VIN0.2V SYMBOL lCC lSB lSB1 MAX -15 170 50 10 -17 165 50 10 -20 160 50 10 UNIT mA mA mA
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HANBit CAPACITANCE
DESCRIPTION Input /Output Capacitance Input Capacitance * NOTE : Capacitance is sampled and not 100% tested TEST CONDITIONS VI/O=0V VIN=0V SYMBOL CI/O CIN
HMS51232M4G
MAX 8 7
UNIT pF pF
AC CHARACTERISTICS (0oC TA 70 oC ; Vcc = 5V 0.5V, unless otherwise specified)
TEST CONDITIONS PARAMETER Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Output Load (A) +5V VALUE 0.V to 3V 3ns 1.5V See below Output Load (B) for t HZ, tLZ, tWHZ, tOW, tOLZ & tOHZ +5V 480W DOUT 255W 30pF* DOUT 255W
480W 5pF*
* Including scope and jig capacitance
READ CYCLE
PARAMETER Read Cycle Time Address Access Time Chip Select to Output Output Enable to Output Output Enable to Low-Z Output Chip Enable to Low-Z Output Output Disable to High-Z Output Chip Disable to High-Z Output Output Hold from Address Change Chip Select to Power Up Time Chip Select to Power Down Time -15
SYMBOL MIN MAX MIN MAX MIN MAX
-17
-20
UNIT
tRC tAA tCO tOE tOLZ tLZ tOHZ tHZ tOH tPU tPD
15 0 3 0 0 3 0 -
15 15 7 7 7 15
17 0 3 0 0 3 0 -
17 17 8 8 8 17
20 0 3 0 0 3 0 -
20 20 9 9 9 20
ns ns ns ns ns ns ns ns ns ns ns
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HANBit WRITE CYCLE
PARAMETER Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write Write Pulse Width (/OE=High) Write Recovery Time (/OE=Low) Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End of Write to Output Low-Z
SYMBOL
HMS51232M4G
-15
MIN MAX MIN
-17
MAX MIN
-20
MAX
UNIT
tWC tCW tAS tAW tWP tWR tWZ tDW tDH tOW
15 12 0 12 12 0 0 8 0 3
7 -
17 13 0 13 13 0 0 9 0 3
8 -
20 14 0 14 14 0 0 10 0 3
9 -
ns ns ns ns ns ns ns ns ns ns
TIMING DIAGRAMS
Please refer to timing diagram chart.
FUNCTIONAL DESCRIPTION
/CE H L L L Note: X means Don't Care /WE X* H H L /OE X H L X MODE Not Select Output Disable Read Write I/O PIN High-Z High-Z DOUT DIN SUPPLY CURRENT I SB, I SB1 ICC ICC ICC
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HANBit PACKAGING INFORMATION
SIMM Design
HMS51232M4G
0.25 mm MAX
2.54 mm MIN 1.270.08mm
1.27
Gold: 1.040.10 mm Solder: 0.9140.10 mm
(Solder & Gold Plating Lead)
ORDERING INFORMATION
Part Number HMS 51232M4G-10 HMS 51232M4G-12 HMS 51232M4G-15 HMS 51232M4G-17 HMS 51232M4G-20 Density 2MByte 2MByte 2MByte 2MByte 2MByte Org. 512K x 32bit 512K x 32bit 512K x 32bit 512K x 32bit 512K x 32bit Package 72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM Component Number 4EA 4EA 4EA 4EA 4EA Vcc 5V 5V 5V 5V 5V Speed 10ns 12ns 15ns 17ns 20ns
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